APTGT50DH120T3G APTGT50DH120T3G C rev1 october, 2012 www.microsemi.com 1-6 application ? welding converters ? switched mode power supplies ? switched reluctance motor drives features ? fast trench + field stop igbt3 technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive t c of v cesat ? rohs compliant absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v t c = 25c 75 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 100 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 277 w rbsoa reverse bias safe operating area t j = 125c 100a @ 1150v these devices are sensitive to electrostatic discharge. proper handling pr ocedures should be followed. see application note apt0502 on www.microsemi.com 23 r1 32 30 cr3 cr1 q4 cr2 cr4 31 29 19 7 22 3 4 18 8 q1 15 16 13 14 1615 18 20 23 22 13 11 12 14 87 2930 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 v ces = 1200v i c = 50a @ tc = 80c asymmetrical - bridge fast trench + field stop igbt3 p ower module downloaded from: http:///
APTGT50DH120T3G APTGT50DH120T3G C rev1 october, 2012 www.microsemi.com 2-6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 250 a t j = 25c 1.4 1.7 2.1 v ce(sat) collector emitter saturation voltage v ge =15v i c = 50a t j = 125c 2.0 v v ge(th) gate threshold voltage v ge = v ce , i c = 2ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 3600 c rss reverse transfer capacitance v ge = 0v,v ce = 25v f = 1mhz 160 pf q g gate charge v ge =15v, i c =50a v ce =600v 0.5 c t d(on) turn-on delay time 90 t r rise time 30 t d(off) turn-off delay time 420 t f fall time inductive switching (25c) v ge = 15v v bus = 600v i c = 50a r g = 18 ? 70 ns t d(on) turn-on delay time 90 t r rise time 50 t d(off) turn-off delay time 520 t f fall time inductive switching (125c) v ge = 15v v bus = 600v i c = 50a r g = 18 ? 90 ns e on turn-on switching energy t j = 125c 5 e off turn-off switching energy v ge = 15v v bus = 600v i c = 50a r g = 18 ? t j = 125c 5.5 mj i sc short circuit data v ge 15v ; v bus = 900v t p 10s ; t j = 125c 200 a diode ratings and characteristics (cr2 & cr3) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v t j = 25c 250 i rm maximum reverse leakage current v r =1200v t j = 125c 500 a i f dc forward current tc = 80c 50 a t j = 25c 1.6 2.1 v f diode forward voltage i f = 50a t j = 125c 1.6 v t j = 25c 170 t rr reverse recovery time t j = 125c 280 ns t j = 25c 5.6 q rr reverse recovery charge t j = 125c 9.9 c t j = 25c 2.2 e r reverse recovery energy i f = 50a v r = 600v di/dt =1900a/s t j = 125c 4.1 mj cr1 & cr4 are igbt protection diodes only downloaded from: http:///
APTGT50DH120T3G APTGT50DH120T3G C rev1 october, 2012 www.microsemi.com 3-6 thermal and package characteristics symbol characteristic min typ max unit igbt 0.45 r thjc junction to case thermal resistance diode 0.72 c/w v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 2 3 n.m wt package weight 110 g temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ?? ? ?? ? ? ?? ? ? ?? ? ? ? t t b r r t 1 1 exp 25 85/25 25 sp3 package outline (dimensions in mm) see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGT50DH120T3G APTGT50DH120T3G C rev1 october, 2012 www.microsemi.com 4-6 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 20 40 60 80 100 00.511.522.533.5 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =17v v ge =9v 0 20 40 60 80 100 01234 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 20 40 60 80 100 5 6 7 8 9 10 11 12 v ge (v) i c (a) energy losses vs collector current eon eon eoff er 0 2 4 6 8 10 12 0 20 40 60 80 100 i c (a) e (mj) v ce = 600v v ge = 15v r g = 18 ? t j = 125c eon eoff er 0 2 4 6 8 10 12 0 1020304050607080 gate resistance (ohms) e (mj) v ce = 600v v ge =15v i c = 50a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 20 40 60 80 100 120 0 300 600 900 1200 1500 v ce (v) i c (a) v ge =15v t j =125c r g =18 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt downloaded from: http:///
APTGT50DH120T3G APTGT50DH120T3G C rev1 october, 2012 www.microsemi.com 5-6 forward characteristic of diode t j =25c t j =125c t j =125c 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 v f (v) i f (a) hard switching zcs zvs 0 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 i c (a) fmax, operating frequency (khz) v ce =600v d=50% r g =18 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode downloaded from: http:///
APTGT50DH120T3G APTGT50DH120T3G C rev1 october, 2012 www.microsemi.com 6-6 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the term s of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life - support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclai ms any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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